NEUTRAL ELECTRON TRAP GENERATION IN SIO2 BY HOT HOLES

被引：42
作者：
OGAWA, S
SHIONO, N
SHIMAYA, M
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 14期
关键词：
D O I：
10.1063/1.103200
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Experimental evidence for neutral electron trap generation in SiO 2 caused by injected holes is presented. The neutral electron traps are detected by Fowler-Nordheim (FN) tunneling electron injection after avalanche hole injection. The density of generated neutral traps increases with the number of injected holes, but does not saturate with that of the trapped holes. The centroid of generated neutral traps is found to be in the middle of the oxide. These results suggest that neutral traps are generated by the holes and not only by the recombination of electrons with trapped holes. The origin of neutral traps is considered to be associated with dipolar defects formed by SiO bond breaking under hole transport in the oxide.
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页码：1329 / 1331
页数：3
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