共 50 条
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- [42] ROLES OF BORON NITROGEN AND GALLIUM IN ELECTROLUMINESCENCE OF SILICON CARBIDE P-N JUNCTIONS SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (11): : 2620 - +
- [43] QUANTUM EFFICIENCY OF RADIATIVE RECOMBINATION IN P-N JUNCTIONS MADE OF GALLIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (08): : 1343 - &
- [44] PHOTOELECTRIC PROPERTIES OF P-N JUNCTIONS IN SILICON-DOPED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 385 - &
- [45] EFFECT OF ALLOYING TEMPERATURE ON CHARACTERISTICS OF TUNNEL P-N JUNCTIONS IN GALLIUM ARSENIDE RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (10): : 1735 - &
- [46] RADIATION RECOMBINATION IN P-N JUNCTIONS OF GALLIUM ARSENIDE IN CASE OF WEAK CURRENTS SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (02): : 431 - +
- [48] RECOMBINATION RADIATION SPECTRUM OF GALLIUM ARSENIDE WITH CURRENT EXCITATION VIA P-N HETEROJUNCTIONS OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (08): : 1919 - +
- [49] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
- [50] INFLUENCE OF YTTERBIUM ON THE FORMATION OF RADIATION DEFECTS IN P-N STRUCTURES MADE OF GALLIUM-PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (10): : 1180 - 1181