LUMINESCENT P-N JUNCTIONS IN GALLIUM PHOSPHIDE

被引：0

作者：

GLASSER, W

GRIMMEISS, HG

SCHOLZ, H

机构：

来源：

PHILIPS TECHNICAL REVIEW | 1964年 / 25卷 / 01期

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D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：20 / &

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[21] COPPER DIFFUSED GALLIUM ARSENIDE P-N JUNCTIONS
FURUKAWA, Y
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[22] RECOMBINATION RADIATION OF GALLIUM ANTIMONIDE P-N JUNCTIONS
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[23] COPPER DIFFUSED GALLIUM ARSENIDE P-N JUNCTIONS
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[24] ELECTRICAL AND ELECTROLUMINESCENCE PROPERTIES OF INDIUM PHOSPHIDE P-N JUNCTIONS
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NOVOSELO.IA
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LEIDERMA.AY
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[25] ELECTRICAL PROPERTIES OF DIFFUSED P-N JUNCTIONS IN INDIUM PHOSPHIDE
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[26] SOME PHOTOELECTRIC PROPERTIES OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE P-N HETEROJUNCTIONS
ALFEROV, ZI
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SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (04): : 990 - +
[27] Linearization of P-N junctions by the same P-N junctions
Bruck, YM
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[28] BREAKDOWN VOLTAGE OF GRADE GALLIUM ARSENIDE P-N JUNCTIONS
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[29] PROPERTIES OF LUMINESCENT GAAS P-N JUNCTIONS WITH ALLOYED P-REGION
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[30] DETERMINATION OF THE RADIATION YIELD COEFFICIENT IN GALLIUM PHOSPHIDE p-n STRUCTURES.
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