SUBMICROMETER POLYSILICON GATE CMOS-SOS TECHNOLOGY

被引：7
作者：
IPRI, AC
SOKOLOSKI, JC
FLATLEY, DW
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 07期
关键词：
D O I：
10.1109/T-ED.1980.20020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1275 / 1279
页数：5
相关论文
共 50 条
[31]   CMOS-SOS SEMI-STATIC SHIFT REGISTERS [J].
IPRI, AC ;
SARACE, JC .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (02) :337-338
[32]   RADIATION-HARDENED CMOS-SOS LSI CIRCUITS [J].
AUBUCHON, KG ;
PETERSON, HT ;
SHUMAKE, DP .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1613-1616
[33]   RADIATION HARDENING OF CMOS-SOS INTEGRATED-CIRCUITS [J].
SCHLESIER, KM .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :152-158
[34]   CONTROL-DATA LAUNCHES CMOS-SOS SPACE COMPUTER [J].
IVERSEN, WR .
ELECTRONICS, 1986, 59 (26) :27-28
[35]   CMOS-SOS PIPELINE FFT PROCESSOR - CONSTRUCTION, PERFORMANCE AND APPLICATIONS [J].
MARTINSON, LW ;
LUNSFORD, JA .
IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS, 1977, 13 (04) :452-452
[36]   EXPOSURE-DOSE-RATE-DEPENDENCE FOR A CMOS-SOS MEMORY [J].
BRUCKER, GJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4056-4059
[37]   RADIATION HARDENED 64-BIT CMOS-SOS RAM [J].
KJAR, RA ;
PETERSON, BE ;
BLANDFORD, JT .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1728-1731
[38]   PLANAR PLASMA-ETCHING APPLICATIONS TO CMOS-SOS DEVICES [J].
YOUNG, MYT ;
PANCHOLY, RK ;
HAGEN, G .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) :C392-C392
[39]   TRANSIENT RADIATION RESPONSE OF HARDENED CMOS-SOS MICROPROCESSOR AND MEMORY DEVICES [J].
BRUCKER, GJ ;
MEASEL, P ;
WAHLIN, K .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1432-1435
[40]   MANUFACTURING CONTROL AND YIELD ASSOCIATED WITH SOS STARTING MATERIAL FOR CMOS-SOS LSI DIGITAL CIRCUITS [J].
MUELLER, RH ;
HASKELL, J ;
WU, WK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) :C256-C256
12345