FORMATION AND DIFFUSION PROPERTIES OF OXIDE-FILMS ON METALS AND ON NITRIDE COATINGS STUDIED WITH AUGER-ELECTRON SPECTROSCOPY AND X-RAY PHOTOELECTRON-SPECTROSCOPY

被引:84
作者
HOFMANN, S
机构
[1] Institut für Werkstoffwissenschaft, Max-Planck-Institut für Metallforschung, D-7000 Stuttgart
关键词
D O I
10.1016/0040-6090(90)90216-Z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An understanding of the mechanisms which govern the formation and growth kinetics of oxides requires an appropriate chemical characterization at different stages. This can be achieved by surface analysis methods with an information depth of a few atomic layers. In particular, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) are frequently used to extract both the elemental composition and the chemical binding state. The initial stages of oxide formation can be studies in situ by AES and XPS at low oxygen pressures, while the in-depth composition of the generated oxide layer is obtained by sputter depth profiling. Application of factor analysis and least-squares fitting methods to spectra involving valence band transitions in AES has shown its capability to differentiate quantitatively between the chemical states of the metallic elements. Comparative studies of low temperature oxidation of pure metals such as tantalum and nickel and of NiCrFe alloys reveal the role of thermodynamic stability and transport mechanisms which govern the establishment of layered structures. The high temperature oxidation behaviour of nitride coatings of titanium and chromium with addition of the ternary component aluminium as studied by AES depth profiling allows the evaluation of diffusion properties and layer compositions which are responsible for the high oxidation resistance of these coatings.
引用
收藏
页码:648 / 664
页数:17
相关论文
共 70 条
[1]  
[Anonymous], 1951, ATOM MOVEMENTS
[2]   THERMAL-OXIDATION AND RESISTIVITY OF TANTALUM NITRIDE FILMS [J].
BRADY, DP ;
FUSS, FN ;
GERSTENBERG, D .
THIN SOLID FILMS, 1980, 66 (03) :287-302
[3]  
BRIGGS D, 1983, PRACTICAL SURFACE AN
[4]  
Bunshah R. F., 1982, DEPOSITION TECHNOLOG
[5]  
BUNTING EN, 1931, BUR STAND J RES, V6, P947
[6]   THEORY OF THE OXIDATION OF METALS [J].
CABRERA, N ;
MOTT, NF .
REPORTS ON PROGRESS IN PHYSICS, 1948, 12 :163-184
[7]  
ERMOLIEFF A, 1985, APPL SURF SCI, V21, P65, DOI 10.1016/0378-5963(85)90008-X
[8]   LOW-TEMPERATURE OXIDATION BEHAVIOR OF REACTIVELY SPUTTERED TIN BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND CONTACT RESISTANCE MEASUREMENTS [J].
ERNSBERGER, C ;
NICKERSON, J ;
SMITH, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :2784-2788
[9]  
Fehlner F. P., 1986, LOW TEMPERATURE OXID
[10]   THERMAL-OXIDATION OF NIOBIUM NITRIDE FILMS AT TEMPERATURES FROM 20-DEGREES-C-400-DEGREES-C .1. THE SURFACE-REACTION [J].
FRANKENTHAL, RP ;
SICONOLFI, DJ ;
SINCLAIR, WR ;
BACON, DD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (10) :2056-2060