NONLINEAR SPECTROSCOPY OF DEEP LEVELS IN WIDE-GAP II-VI SEMICONDUCTORS

被引：5
|
作者：
BALTRAMIEJUNAS, R [1 ]
GAVRYUSHIN, V [1 ]
机构：
[1] VILNIUS V KAPSUKAS UNIV,DEPT SEMICOND PHYS,VILNIUS 232600,LITHUANIA,USSR
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(90)91062-U
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Experimental data of nonlinear spectroscopy of intrinsic two-photon (TPA) and impurity two-step (TSA) light absorption in wide-gap semiconductors, illustrating new materials science possibilities in the investigation of band and defect states of the crystals, are discussed. A new field in TPA spectroscopy of band edge deformation by lattice defects or crystal perfection TPA metrology is revealed. Nonlinear deep level active spectroscopy (DLAS) determined by saturated laser modulation of quasistationary TSA via deep levels (DLs) is presented as a method of the investigation and parameter metrology of DLs. The influence of the intrinsic stoichiometric defects on a number of technologically different II-VI crystals is presented experimentally. © 1989.
引用
收藏
页码：699 / 704
页数：6
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