INSITU ELLIPSOMETRY AS A DIAGNOSTIC OF THIN-FILM GROWTH - STUDIES OF AMORPHOUS-CARBON

被引:26
作者
COLLINS, RW [1 ]
机构
[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.576289
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1378 / 1385
页数:8
相关论文
共 40 条
[1]   ION-BEAM DEPOSITION OF THIN FILMS OF DIAMONDLIKE CARBON [J].
AISENBERG, S ;
CHABOT, R .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2953-+
[2]  
Angus J.C., 1986, PLASMA DEPOSITED THI, P89
[3]  
Aspnes D. E., 1981, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V276, P188
[4]   CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED PHYSICS LETTERS, 1981, 39 (04) :316-318
[5]   HIGH PRECISION SCANNING ELLIPSOMETER [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED OPTICS, 1975, 14 (01) :220-228
[6]   INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE ;
THEETEN, JB .
PHYSICAL REVIEW B, 1979, 20 (08) :3292-3302
[7]   OPTICAL-PROPERTIES OF THIN-FILMS [J].
ASPNES, DE .
THIN SOLID FILMS, 1982, 89 (03) :249-262
[8]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[9]  
AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, P240
[10]   ION-BEAM SPUTTER-DEPOSITED DIAMOND-LIKE FILMS [J].
BANKS, BA ;
RUTLEDGE, SK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03) :807-814