SELECTIVELY DELTA-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATIONS N2DEG-GREATER-THAN-OR-EQUAL-TO-1.5X10(12) CM-2 FOR FIELD-EFFECT TRANSISTORS

被引：85
作者：
SCHUBERT, EF
CUNNINGHAM, JE
TSANG, WT
TIMP, GL
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 15期
关键词：
D O I：
10.1063/1.98722
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1170 / 1172
页数：3
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