DIAMOND COATINGS FROM A SOLID CARBON SOURCE

被引：20
作者：
JOU, S
DOERR, HJ
BUNSHAH, RF
机构：
[1] Department of Materials Science and Engineering, University of California, Los Angeles
来源：
THIN SOLID FILMS | 1994年 / 253卷 / 1-2期
关键词：
CARBON; DIAMOND; PLASMA PROCESSING AND DEPOSITION; STRUCTURAL PROPERTIES;
D O I：
10.1016/0040-6090(94)90301-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A plasma-enhanced chemical transport process was developed to deposit diamond films from a solid carbon source in a subatmospheric pressure hydrogen environment (106-400 mbar (80-300 Torr)). The process uses inexpensive simple equipment. The diamond films were examined by X-ray diffraction, Raman spectroscopy and scanning electron microscopy. High quality diamond films were grown at 1 mu m h(-1) deposition rate in static and dynamic flow systems. The effect of various surface coatings on diamond nucleation on a silicon substrate was investigated. The nucleation density on bare silicon was 4 x 10(6) cm(-2). A high nucleation density up to 10(9) cm(-2) was found on a fullerene-enriched carbon-coated silicon substrate. Diamond film morphology Variations with deposition conditions were studied.
引用
收藏
页码：95 / 102
页数：8
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