ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF CUBIC ZNCDS LATTICE-MATCHED TO GAAS SUBSTRATE

被引：20
|
作者：
FUJITA, S
HAYASHI, S
FUNATO, M
FUJITA, S
机构：
[1] Department of Electrical Engineering, Kyoto University, Kyoto
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(90)90559-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We investigated alloy composition and crystallographic properties of Zn1-xCdxS epilayers on GaAs substrates in terms of the growth parameters, and discussed the growth characteristics. The alloy composition was well controlled by the flow rate of source organometallics of Zn and Cd, although it depended on the growth temperature. The epilayers exhibited a cubic structure at a Cd composition lower than x ∼ 0.7. Lattice-matched epilayers showed the lowest value in FWHMs of X-ray rocking curves ( ∼ 70 arc sec) as well as the blue to purple photoluminescence. © 1990.
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页码：437 / 440
页数：4
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