BEAM-INDUCED SEEDED LATERAL EPITAXY WITH SUPPRESSED IMPURITY DIFFUSION FOR A 3-DIMENSIONAL DRAM CELL FABRICATION

被引：3

作者：

OHKURA, M

KUSUKAWA, K

SUNAMI, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 02期

关键词：

D O I：

10.1109/16.19934

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：333 / 339

页数：7

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