LOW-THRESHOLD (APPROXIMATELY-600 A/CM2 AT ROOM-TEMPERATURE) GAAS/AIGAAS LASERS ON SI (100)

被引：28

作者：

CHEN, HZ

GHAFFARI, A

WANG, H

MORKOC, H

YARIV, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 17期

关键词：

D O I：

10.1063/1.98716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1320 / 1321

页数：2

共 9 条

[1]

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[3] DEPENDENCE OF THRESHOLD CURRENT-DENSITY AND EFFICIENCY ON FABRY-PEROT CAVITY PARAMETERS - SINGLE HETEROJUNCTION (ALGA)AS-GAAS LASER-DIODES [J].

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[4] LOW THRESHOLD LASER OPERATION AT ROOM-TEMPERATURE IN GAAS/(AL,GA)AS STRUCTURES GROWN DIRECTLY ON (100)SI [J].

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[5]

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[6] 2ND QUANTIZED STATE LASING OF A CURRENT PUMPED SINGLE QUANTUM-WELL LASER [J].

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YARIV, A .

APPLIED PHYSICS LETTERS, 1986, 49 (25) :1689-1691

[7] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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UMENO, M .

APPLIED PHYSICS LETTERS, 1986, 48 (06) :413-414

[8]

SHAW D, 1987, APR P MAT RES SOC AN

[9] ROOM-TEMPERATURE OPERATION OF GAAS/ALGAAS DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE [J].

WINDHORN, TH ;

METZE, GM .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1031-1033

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