EFFECTS OF DISLOCATIONS IN SILICON TRANSISTORS WITH IMPLANTED BASES

被引：26

作者：

ASHBURN, P ^{[1
]}

BULL, C ^{[1
]}

NICHOLAS, KH ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 09期

关键词：

D O I：

10.1016/0038-1101(77)90001-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：731 / 740

页数：10

共 28 条

[11] DIFFUDION-INDUCED STRESS AND LATTICE DISORDERS IN SILICON [J].

LAWRENCE, JE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) :819-&

[12] REDUCED GAIN OF ION-IMPLANTED TRANSISTORS [J].

NICHOLAS, KH ;

FORD, RA ;

DANIEL, PJ ;

SULLIVAN, CW ;

SANT, P ;

BULL, C ;

BOOKER, GR .

APPLIED PHYSICS LETTERS, 1975, 26 (06) :320-322

[13]

PETTIT HR, 1971, 25TH P ANN M EMAG I, P290

[14] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES [J].

PRUSSIN, S .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1635-1642

[15] ADAPTION OF ION-IMPLANTATION FOR INTEGRATED-CIRCUITS [J].

PRUSSIN, S ;

FERN, AM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) :830-832

[16]

Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[17] ELECTRICALLY ACTIVE STACKING FAULTS IN SILICON. [J].

Ravi, K.V. ;

Varker, C.J. ;

Volk, C.E. .

Journal of the Electrochemical Society, 1973, 120 (04) :533-541

[18] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[19] OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].

SANDERS, IR ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1969, 20 (167) :881-&

[20]

Sandiford D., 1959, J APPL PHYS, V30, P1981

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