EFFECTS OF DISLOCATIONS IN SILICON TRANSISTORS WITH IMPLANTED BASES

被引：26

作者：

ASHBURN, P ^{[1
]}

BULL, C ^{[1
]}

NICHOLAS, KH ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 09期

关键词：

D O I：

10.1016/0038-1101(77)90001-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：731 / 740

页数：10

共 28 条

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[5] EFFECTS OF SPATIAL DEPENDENCE OF RECOMBINATION CENTERS ON I-V CHARACTERISTICS OF P-N JUNCTIONS [J].

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[6] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

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[7]

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[8]

Ikeda T., 1975, Oyo Buturi, V44, P311

[9]

KRESSEL H, 1967, RCA REV, V28, P175

[10] BEHAVIOR OF DISLOCATIONS IN SILICON SEMICONDUCTOR DEVICES - DIFFUSION ELECTRICAL [J].

LAWRENCE, JE .

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