STUDY OF COSI2/SI STRAINED LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：10

作者：

KAO, YC

WANG, KL

DEFRESART, E

HULL, R

BAI, G

JAMIESON, D

NICOLET, MA

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

[2] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583781

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：745 / 748

页数：4

共 7 条

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[2]

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[3]

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[4] UNIFORMITY AND CRYSTALLINE QUALITY OF COSI2/SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY AND REACTIVE DEPOSITION EPITAXY [J].

KAO, YC ;

TEJWANI, M ;

XIE, YH ;

LIN, TL ;

WANG, KL .

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[5] X-RAY ROCKING CURVE ANALYSIS OF SUPERLATTICES [J].

SPERIOSU, VS ;

VREELAND, T .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1591-1600

[6] EPITAXIAL SILICIDES [J].

TUNG, RT ;

POATE, JM ;

BEAN, JC ;

GIBSON, JM ;

JACOBSON, DC .

THIN SOLID FILMS, 1982, 93 (1-2) :77-90

[7] CRYSTAL INTERFACES .2. FINITE OVERGROWTHS [J].

VANDERMERWE, JH .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :123-&

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