ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL ELECTRON-GAS IN PSEUDOMORPHIC INXGA1-XAS/N-IN0.52AL0.48AS HETEROSTRUCTURES

被引：17
作者：
SASA, S
NAKATA, Y
SUGIYAMA, Y
FUJII, T
MIYAUCHI, E
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90379-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：189 / 192
页数：4
相关论文
共 10 条
[1]  
CHAN YJ, 1987, IEDM, P426
[2]   0.1-MU-M GATE-LENGTH PSEUDOMORPHIC HEMTS [J].
CHAO, PC ;
TIBERIO, RC ;
DUH, KHG ;
SMITH, PM ;
BALLINGALL, JM ;
LESTER, LF ;
LEE, BR ;
JABRA, A ;
GIFFORD, GG .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :489-491
[3]   CURRENT-GAIN CUTOFF FREQUENCY COMPARISON OF INGAAS HEMTS [J].
HIKOSAKA, K ;
SASA, S ;
HARADA, N ;
KURODA, S .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) :241-243
[4]  
HONG WP, 1986, IEEE ELECTR DEVICE L, V7, P480, DOI 10.1109/EDL.1986.26446
[5]   ENHANCEMENT IN EXCITONIC ABSORPTION DUE TO OVERLAP IN HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN GAAS/INALGAAS QUANTUM-WELL STRUCTURES [J].
KOTHIYAL, GP ;
HONG, S ;
DEBBAR, N ;
BHATTACHARYA, PK ;
SINGH, J .
APPLIED PHYSICS LETTERS, 1987, 51 (14) :1091-1093
[6]   EXTREMELY HIGH 2DEG CONCENTRATION IN SELECTIVELY DOPED IN0.53GA0.47AS N-IN0.53AL0.48AS HETEROSTRUCTURES GROWN BY MBE [J].
NAKATA, Y ;
SASA, S ;
SUGIYAMA, Y ;
FUJII, T ;
HIYAMIZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (01) :L59-L61
[7]   LARGE VALENCE-BAND NONPARABOLICITY AND TAILORABLE HOLE MASSES IN STRAINED-LAYER SUPERLATTICES [J].
OSBOURN, GC ;
SCHIRBER, JE ;
DRUMMOND, TJ ;
DAWSON, LR ;
DOYLE, BL ;
FRITZ, IJ .
APPLIED PHYSICS LETTERS, 1986, 49 (12) :731-733
[8]  
SASA S, 1988, I PHYS C SER, V91, P585
[9]  
SASAKI H, 1987, APPL PHYS LETT, V51, P1934
[10]   LIGHT-HOLE CONDUCTION IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES [J].
SCHIRBER, JE ;
FRITZ, IJ ;
DAWSON, LR .
APPLIED PHYSICS LETTERS, 1985, 46 (02) :187-189
1