INSITU OBSERVATIONS OF MISFIT DISLOCATION PROPAGATION IN GEXSI1-X/SI(100) HETEROSTRUCTURES

[1] BEAN JC, 1984, J VAC TECHNOL A, V2, P936

[2] BEAN JC, 1986, 1ST P INT S SI MOL B, P385

[3] BEAN JC, 1985, MATER RES SOC S P, V37, P245

[4] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[5] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4063 - 4065

[6] ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1080 - 1081

[7] GRABOW M, 1987, P MAT RES SOC, V94, P13

[8] Hull R., 1985, Thirteenth International Conference on Defects in Semiconductors, P505

[9] ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY [J]. APPLIED PHYSICS, 1975, 8 (03): : 199 - 205

[10] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 126 - 133

[1] BEAN JC, 1984, J VAC TECHNOL A, V2, P936

[2] BEAN JC, 1986, 1ST P INT S SI MOL B, P385

[3] BEAN JC, 1985, MATER RES SOC S P, V37, P245

[4] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[5] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4063 - 4065

[6] ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1080 - 1081

[7] GRABOW M, 1987, P MAT RES SOC, V94, P13

[8] Hull R., 1985, Thirteenth International Conference on Defects in Semiconductors, P505

[9] ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY [J]. APPLIED PHYSICS, 1975, 8 (03): : 199 - 205

[10] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 126 - 133