BISTABILITY IN GRATING TUNED EXTERNAL CAVITY SEMICONDUCTOR-LASERS

被引：71
|
作者：
ZORABEDIAN, P [1 ]
TRUTNA, WR [1 ]
CUTLER, LS [1 ]
机构：
[1] HEWLETT PACKARD LABS,CORP RES LABS,PALO ALTO,CA 94304
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 11期
关键词：
D O I：
10.1109/JQE.1987.1073263
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1855 / 1860
页数：6
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