Effect of high pressure on conductivity in the basal plane of Y1-xPrxBa2Cu3O7-delta single crystals lightly doped of praseodymium

被引:2
|
作者
Khadzhai, G. Ya [1 ]
Vovk, N. R. [1 ]
Vovk, R. V. [1 ,2 ]
Savich, S., V [1 ]
Kislitsa, M. [1 ]
Kotvitskaya, K. A. [1 ,2 ]
Morozov, V. S. [2 ]
Leniv, J. G. [2 ]
Timofeev, S. S. [2 ]
机构
[1] V Karazin Kharkiv Natl Univ, Phys Dept, 4 Svobody Sq, UA-61022 Kharkov, Ukraine
[2] Ukrainian State Acad Railway Transport, UA-61050 Kharkov, Ukraine
来源
FUNCTIONAL MATERIALS | 2015年 / 22卷 / 01期
关键词
YBCO single crystals; doping; hydrostatic pressure; fluctuation conductivity; crossover; pseudogap state;
D O I
10.15407/fm22.01.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Effect of high hydrostatic pressure up to 17 kbar on conductivity of lightly Pr-doped Y1-xPrxBa2Cu3O7-delta (x approximate to 0.05) single crystals is investigated. We show that in contrast to non-doped YBa2Cu3O7-delta samples, application of the high pressure leads to a substantial increase of the pressure derivative of the coherence length d xi(c)/dP and temperature shift of 2D-3D crossover point. Possible mechanisms of the influence of the high pressure on the critical temperature and the coherence length are discussed within the frames of a model assuming the presence of singularities in the charge carriers electron spectrum typical for lattices with strong coupling. The excess conductivity ANT) in Y0.95Pr0.05Ba2Cu3O7-delta has been revealed to obey an exponential dependence in the wide temperature range T-f < T <T*. At this, description of the excess conductivity by the expression Delta sigma similar to (1 - T/T*)exp(Delta*(ab)/T) can be interpreted in terms of the mean-field theory, where T* is the mean-field superconducting transition temperature and pseudogap temperature dependence is satisfactory described within the framework of the BCS-BEC crossover theory. An increase of the applied pressure leads to narrowing of the temperature range of realization of the pseudogap regime, thereby expanding the linear temperature dependence of the basal-plane resistivity rho(ab)(T).
引用
收藏
页码:5 / 13
页数:9
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