ON THE FEASIBILITY OF GROWING DILUTE CXSI1-X EPITAXIAL ALLOYS

被引：71

作者：

POSTHILL, JB

RUDDER, RA

HATTANGADY, SV

FOUNTAIN, GG

MARKUNAS, RJ

机构：

[1] Research Triangle Institute, Res. Triangle Park

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 08期

关键词：

D O I：

10.1063/1.102696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dilute CxSi1-x epitaxial films have been grown on Si(100) by remote plasma-enhanced chemical vapor deposition. Carbon concentrations of ∼3 at.% have been achieved at a growth temperature of 725 °C. No evidence for the formation or precipitation of SiC was found using x-ray diffraction and transmission electron microscopy.

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页码：734 / 736

页数：3

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