WIDEBAND MODULATION OF 1.3 MU-M INGAASP BURIED CRESCENT LASERS WITH IRON-DOPED AND COBALT-DOPED SERMI-INSULATING CURRENT BLOCKING LAYERS

被引：19

作者：

CHENG, WH ^{[1
]}

HUANG, SY ^{[1
]}

APPELBAUM, A ^{[1
]}

POOLADDEJ, J ^{[1
]}

BUEHRING, KD ^{[1
]}

WOLF, D ^{[1
]}

RENNER, DS ^{[1
]}

HESS, KL ^{[1
]}

ZEHR, SW ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 06期

关键词：

D O I：

10.1109/3.29268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1353 / 1361

页数：9

共 32 条

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