共 50 条
- [1] THE INFLUENCE OF DISLOCATION DENSITY ON THE UNIFORMITY OF ELECTRICAL-PROPERTIES OF SI IMPLANTED, SEMI-INSULATING LEC-GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (05): : L270 - L272
- [2] INFLUENCE OF DISLOCATION DENSITY ON THE UNIFORMITY OF ELECTRICAL PROPERTIES OF Si IMPLANTED, SEMI-INSULATING LEC-GaAs. Japanese Journal of Applied Physics, Part 2: Letters, 1983, 22 (05): : 270 - 272
- [4] EXPERIMENTAL CORRELATION BETWEEN EPD AND ELECTRICAL-PROPERTIES IN UNDOPED LEC AS-GROWN SEMI-INSULATING GAAS CRYSTALS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (04): : 510 - 511
- [8] IMPROVED UNIFORMITY OF RESISTIVITY DISTRIBUTION IN LEC SEMI-INSULATING GAAS PRODUCED BY ANNEALING JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L602 - L605
- [9] UNIFORMITY OF ANNEALED AND BULK-QUENCHED UNDOPED, SEMI-INSULATING, LEC GAAS SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 31 - 36
- [10] ELECTRICAL HOMOGENEITY OF SEMI-INSULATING LEC GAAS IMPROVED BY POSTGROWTH ANNEALING PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 121 (01): : 95 - 103