CHARGE-BASED CURRENT MODEL FOR CMOS GATES

被引：0

作者：

WANG, JH

FAN, JT

FENG, WS

机构：

[1] Dept. of Electrical Eng., National Taiwan University, Taipei, Taiwan 10764, Rm. 307, No. 1, Section 4, Roosevelt Road

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 15期

关键词：

CMOS INTEGRATED CIRCUITS; LOGIC GATES; SEMICONDUCTOR DEVICES MODELS;

D O I：

10.1049/el:19930900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A charge-based current model is introduced for the first time, which includes the current waveforms induced by non-active events. Time-domain current waveforms can be obtained and the results show good agreement with SPICE. Three error values, DC, Max I, and Max T, differ by no more than 10% from SPICE.

引用

页码：1343 / 1345

页数：3