FERROELECTRIC LA-SR-CO-O/PB-ZR-TI-O/LA-SR-CO-O HETEROSTRUCTURES ON SILICON VIA TEMPLATE GROWTH

被引：335

作者：

RAMESH, R ^{[1
]}

GILCHRIST, H ^{[1
]}

SANDS, T ^{[1
]}

KERAMIDAS, VG ^{[1
]}

HAAKENAASEN, R ^{[1
]}

FORK, DK ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 26期

关键词：

D O I：

10.1063/1.110106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric Pb0.9La0.1Zr0.2Ti0.8O3 thin film capacitors with a symmetrical La-Sr-Co-O top and bottom electrodes have been grown on [001] Si with yttria stabilized zirconia (YSZ) buffer layer. A layered perovskite ''template'' layer (200-300 angstrom thick), grown between the YSZ buffer layer and the bottom La-Sr-Co-O electrode, is critical for obtaining the required orientation of the subsequent layers. When compared to the capacitors grown with the Y-Ba-Cu-O top and bottom electrodes, these structures possess two advantages: (i) the growth temperatures are lower by 60-150-degrees-C; (ii) the capacitors show a larger remnant polarization DELTAP (DELTAP=switched polarization-nonswitched polarization), 25-30 muC/cm2, for an applied voltage of only 2 V (applied field of 70 kV/cm). The fatigue, retention, and aging characteristics of these new structures are excellent.

引用

页码：3592 / 3594

页数：3

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