THE EFFECT OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF SELECTIVELY DOPED GAAS/N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE

被引：19
作者：
ISHIKAWA, T
HIYAMIZU, S
MIMURA, T
SAITO, J
HASHIMOTO, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 11期
关键词：
D O I：
10.1143/JJAP.20.L814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L814 / L816
页数：3
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