MODEL FOR DEFECT-FREE EPITAXIAL LATERAL OVERGROWTH OF SI OVER SIO2 BY LIQUID-PHASE EPITAXY

A growth model for defect-free epitaxial lateral overgrowth by liquid phase epitaxy is presented. Growth in the pure step flow mode and a preferential development of (111) planes in liquid phase epitaxy permit one to quantitatively predict the overgrowth. The shape and size of the Si lamellae which grow over SiO2 depend on the crystallographic orientations of the substrate growth face and of the seeding windows. Overgrowth experiments with Si on oxidized, (111)- and (100)-oriented Si wafers serve to verify the model. Growth experiments from In and Bi solutions in temperature intervals between 950 and 800-degrees-C yield overgrowth widths up to 120-mu-m and aspect ratios of 40:1 on (111) oriented wafers.