INITIAL-STAGE OF EPITAXIAL-GROWTH AT THE HIGH-TEMPERATURE OF GAAS AND ALGAAS ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：14
|
作者：
SOGA, T [1 ]
GEORGE, T [1 ]
JIMBO, T [1 ]
UMENO, M [1 ]
WEBER, ER [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT MAT SCI,BERKELEY,CA 94720
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 11期
关键词：
D O I：
10.1063/1.104354
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs and AlGaAs grown directly on Si were characterized by transmission electron microscopy. Both GaAs and AlGaAs grow three-dimensionally on Si at 750-degrees-C. The spacing between GaAs islands is large, while the AlGaAs islands appear to be contiguous for a nominal thickness of 22.5 nm. There is a high density of dislocations, stacking faults, and microtwins in the thin GaAs layer, but drastic reduction of such defects was observed in the planar AlGaAs nucleation layer.
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页码：1170 / 1172
页数：3
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