VERY HIGH-TRANSCONDUCTANCE HETEROJUNCTION FIELD-EFFECT TRANSISTOR (HFET)

被引：15
|
作者：
TAYLOR, GW [1 ]
LEBBY, MS [1 ]
CHANG, TY [1 ]
GNALL, RN [1 ]
SAUER, N [1 ]
TELL, B [1 ]
SIMMONS, JG [1 ]
机构：
[1] UNIV BRADFORD,CTR MICROELECTR & CADMAT,BRADFORD BD7 1HR,W YORKSHIRE,ENGLAND
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 02期
关键词：
D O I：
10.1049/el:19870056
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
7
引用
收藏
页码：77 / 79
页数：3
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