HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODIODES WITH ER-DOPED GAAS

被引：14

作者：

SETHI, S

BROCK, T

BHATTACHARYA, PK

KIM, J

WILLIAMSON, S

CRAIG, D

NEES, J

机构：

[1] Department of Electrical Engineering and Computer Science, University of Michigan, MI 48109, Ann Arbor

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.363239

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Very high-speed MSM photodiodes have been fabricated on Er-doped GaAs over a doping range of 10(18)-10(20) cm-3. The impulse response (characterized by photoconductive sampling) of these diodes, with finger widths/spacings of 2 mum, has been found to be tunable over a range of about 3 ps-22 ps. Electro-optic sampling was used to characterize MSM diodes with finger widths/spacings of 0.5 mum and 1 mum on a sample with [Er] = 10(19) cm-3, resulting in 3-dB bandwidths of 160 GHz and 140 GHz, respectively, corresponding to pulse widths of 2.7 ps and 3.3 ps. Correlation measurements were also done on the GaAs:Er samples, using an all-electronic Sampling Optical Temporal Analyzer (SOTA) structure.

引用

页码：106 / 108

页数：3

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