MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES

被引：44

作者：

DRUMMOND, TJ ^{[1
]}

MORKOC, H ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90464-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：449 / 454

页数：6

共 13 条

[1]

CHO AY, 1980, ELECTRON LETT, V16, P49

[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[3] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

MORKOC, H ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1380-1386

[4]

DRUMMOND TJ, 1981, J APPL PHYS, V52

[5] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].

HESS, K .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :484-486

[6] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE [J].

MORI, S ;

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (03) :865-873

[7] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J].

MORKOC, H ;

WITKOWSKI, LC ;

DRUMMOND, TJ ;

STANCHAK, CM ;

CHO, AY ;

STREETMAN, BG .

ELECTRONICS LETTERS, 1980, 16 (19) :753-754

[8] TRANSPORT-PROPERTIES OF SN-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MORKOC, H ;

CHO, AY ;

RADICE, C .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4882-4884

[9]

PRICE PB, COMMUNICATION

[10]

STANCHAK CM, 1981, REV SCI INSTR, V52, P105

← 1 2 →