TIME-RESOLVED MEASUREMENT OF SINGLE-ELECTRON TUNNELING IN A SI SINGLE-ELECTRON TRANSISTOR WITH SATELLITE SI ISLANDS

被引：54

作者：

FUJIWARA, A

TAKAHASHI, Y

MURASE, K

TABE, M

机构：

[1] NTT LSI Laboratories, Atsugi, Kanagawa 243-01

[2] Research Institute of Electronics, Shizuoka University, Hamamatsu 432

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 20期

关键词：

D O I：

10.1063/1.114824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Si single-electron transistor (SET) with satellite Si islands has been fabricated by pattern-dependent oxidation of cross-shaped Si wires on a separation by implanted oxygen (SIMOX) substrate. The oscillatory conductance-versus-gate voltage characteristics of the SET show hysteresis as a result of abrupt jumps in the conductance at high temperatures around 30 K. This phenomenon is attributed to the memory effect of a single electron that tunnels between the SET Si island and the satellite Si islands. Time-resolved measurements have clarified that the conductance jump is a Poisson process, which is clear evidence of the single-electron tunneling between the Si islands. (C) 1995 American Institute of Physics.

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页码：2957 / 2959

页数：3

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