CONTINUOUS GROWTH OF HIGH-PURITY INP-INGAAS ON INP SUBSTRATE BY VAPOR-PHASE EPITAXY

被引：11
作者：
SUSA, N
YAMAUCHI, Y
KANBE, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 04期
关键词：
D O I：
10.1143/JJAP.20.L253
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L253 / L256
页数：4
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