WAKE FIELDS IN SEMICONDUCTOR PLASMAS

被引：26

作者：

BEREZHIANI, VI

MAHAJAN, SM

机构：

[1] INT CTR THEORET PHYS,TRIESTE,ITALY

[2] UNIV TEXAS,INST FUS STUDIES,AUSTIN,TX 78712

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.73.1837

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is shown that an intense short laser pulse propagating through a semiconductor plasma will generate longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for example, InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-held accelerators.

引用

页码：1837 / 1840

页数：4

共 20 条

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