NANOSCALE MODIFICATION OF THIN-FILM SURFACES BY VOLTAGE PULSES IN STM

被引：0
作者：
GURIN, VS
ARTEMYEV, MV
机构：
[1] Physico-Chemical Problems Research Institute, Minsk, 220080, Leningradskaja str.
来源：
MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期
关键词：
*This work was mupported in part by Grant N RWH000 from the International Science Foundation;
D O I：
10.1016/0167-9317(94)00067-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Surface modification by means of the raised tip potential mode in scanning tunneling microscope is studied for thin film structures on the basis of some inorganic semiconductors, organic and metal-containing compounds which are able to undergo photo-, radiation- and thermostimulated transformations. We discuss possible pathways of chemical processes stimulated by the STM voltage pulses leading to formation of nanometer-scale structures on surface.
引用
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页码：109 / 112
页数：4
相关论文
共 12 条
  • [1] Komiyama, Nano-fabrication of solid surfaces using STM., Hyomen Kagaku, 10, (1989)
  • [2] Shedd, Russell, Nanotechnology, 1, (1990)
  • [3] Wiesendanger, Appl. Surf. Sci., 54, (1992)
  • [4] Rohrer, Jpn. J. Appl. Phys., 32, (1993)
  • [5] Foot, Simon, J. Phys., 22 D, (1989)
  • [6] Gomer, Possible mechanisms of atom transfer in scanning tunneling microscopy, IBM Journal of Research and Development, 30, (1986)
  • [7] Artamonov, Valakh, Litvinchuk, Strelchuk, Poverkhnost, 1, (1989)
  • [8] Jayatirtha, Henderson, Burger, Volz, Appl. Phys. Lett., 62, (1993)
  • [9] Kreuzer, Surf. Sci., 246, (1991)
  • [10] Tsong, Phys. Rev., 44 B, (1991)
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