RESONANCES IN THE TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF DOPED SILICON DUE TO EXCITED IMPURITY STATES

被引：0
作者：
ZHDAN, AG
LIFSHITS, TM
RYLKOV, VV
SHAFRAN, AG
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来源：
SEMICONDUCTORS | 1993年 / 27卷 / 05期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：465 / 467
页数：3
相关论文
共 6 条
[1]  
FISCHER DW, 1983, PHYS REV B, V27, P2826
[2]  
GOROKHOVATSKII YA, 1991, THERMALLY ACTIVATED
[3]   PHOTOELECTRIC SPECTROSCOPY - NEW METHOD OF ANALYSIS OF IMPURITIES IN SEMICONDUCTORS [J].
KOGAN, SM ;
LIFSHITS, TM .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (01) :11-39
[4]   EVEN-PARITY ACCEPTOR EXCITED-STATES IN SI FROM BOUND EXCITON 2 HOLE TRANSITIONS [J].
THEWALT, MLW .
SOLID STATE COMMUNICATIONS, 1977, 23 (10) :733-735
[5]  
VEDENEEV AS, 1988, FIZ TEKH POLUPROV, V22, P586
[6]  
ZHDAN AG, 1985, PRIB TEKH EKSP, P177
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