NATIVE-OXIDE TOP-CONFINED AND BOTTOM-CONFINED NARROW STRIPE P-N ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASER

被引：101
作者：
MARANOWSKI, SA [1 ]
SUGG, AR [1 ]
CHEN, EI [1 ]
HOLONYAK, N [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 12期
关键词：
D O I：
10.1063/1.110728
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new form of AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure (QWH) laser that is confined above and below the active region by an insulating low refractive index native oxide is demonstrated. The laser diodes are defined from a mesa edge by the selective lateral oxidation and anisotropic oxidation of high Al composition AlyGa1-yAs layers (y = 0.85, 0.87) located above and below the QW and waveguide active region. This structure provides excellent current and optical confinement, resulting in continuous wave threshold currents of approximately 8 mA and maximum output powers (uncoated laser) of 35 mW/ facet for a approximately 2.5 mum aperture.
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页码：1660 / 1662
页数：3
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