TRANSMISSION ELECTRON-MICROSCOPE STUDY OF LASER ANNEALING OF ION DAMAGE IN SILICON AND GALLIUM-ARSENIDE

被引：3

作者：

NARAYAN, J

WHITE, CW

YOUNG, RT

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 47卷 / 1-4期

关键词：

D O I：

10.1080/00337578008209205

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：167 / 170

页数：4

共 50 条

[21] ION DAMAGE TO SILICON-CRYSTALS INSIDE AN ELECTRON-MICROSCOPE
URBAN, K
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (01): : 213 - 218
[22] TRANSMISSION ELECTRON-MICROSCOPE STUDIES OF LASER AND THERMALLY ANNEALED ION-IMPLANTED SILICON
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YOUNG, RT
WHITE, CW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C138 - C138
[23] ELECTRON-MICROSCOPY STUDY OF EFFECTS OF ANNEALING ON DEFECT STRUCTURE OF HEAVILY SILICON-DOPED GALLIUM-ARSENIDE
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[24] TRANSMISSION ELECTRON-MICROSCOPE STUDY OF ION-BEAM ANNEALING EFFECTS OF ION-IMPLANTED AND EVAPORATED AMORPHOUS-SILICON
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[25] ION IRRADIATION DAMAGE OF SILICON IN TRANSMISSION ELECTRON MICROSCOPE
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[26] LASER-BASED STRUCTURE STUDIES OF SILICON AND GALLIUM-ARSENIDE
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[27] STUDY OF THE CRYSTALLINE-STRUCTURE AND OF THE COMPOSITION OF PULVERIZED GALLIUM-ARSENIDE, WITH OR WITHOUT LASER ANNEALING
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[28] ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE
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[29] ELECTRICAL ACTIVATION BEHAVIOR OF ION-IMPLANTED SILICON IN GALLIUM-ARSENIDE DURING RAPID THERMAL ANNEALING
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[30] RAMAN-SCATTERING IN GALLIUM-ARSENIDE ION-DOPED WITH SILICON
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