EPITAXIAL CRYSTALLIZATION OF GAP FILMS ON SI BY NANOSECOND LASER-PULSES

被引：0
作者：
KACHURIN, GA
LOVYAGIN, RN
NIDAEV, EV
ROMANOV, SI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：272 / 274
页数：3
相关论文
共 18 条
[1]  
ABDULLAEV GB, 1978, SOV PHYS SEMICOND+, V12, P1354
[2]  
AGASIEV AA, 1977, SOV PHYS SEMICOND+, V11, P1390
[3]   EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON [J].
BEAN, JC ;
LEAMY, HJ ;
POATE, JM ;
ROZGONYI, GA ;
SHENG, TT ;
WILLIAMS, JS ;
CELLER, GK .
APPLIED PHYSICS LETTERS, 1978, 33 (03) :227-230
[4]   CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].
CSEPREGI, L ;
MAYER, JW ;
SIGMON, TW .
PHYSICS LETTERS A, 1975, 54 (02) :157-158
[5]   CRYSTALLIZATION OF AMORPHOUS SILICON FILMS BY ND-YAG LASER-HEATING [J].
FAN, JCC ;
ZEIGER, HJ .
APPLIED PHYSICS LETTERS, 1975, 27 (04) :224-226
[6]   STRUCTURE OF CRYSTALLIZED LAYERS BY LASER ANNEALING OF (100) AND (111) SELF-IMPLANTED SILICON SAMPLES [J].
FOTI, G ;
RIMINI, E .
APPLIED PHYSICS, 1978, 15 (04) :365-369
[7]   AMORPHOUS THICKNESS DEPENDENCE IN TRANSITION TO SINGLE-CRYSTAL INDUCED BY LASER-PULSE [J].
FOTI, G ;
RIMINI, E ;
BERTOLOTTI, M ;
VITALI, G .
PHYSICS LETTERS A, 1978, 65 (5-6) :430-432
[8]   CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].
GAT, A ;
GERZBERG, L ;
GIBBONS, JF ;
MAGEE, TJ ;
PENG, J ;
HONG, JD .
APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778
[9]   HETEROEPITAXIAL GROWTH OF GAP ON SILICON BY MOLECULAR-BEAM EPITAXY [J].
GONDA, SI ;
MATSUSHIMA, Y ;
MUKAI, S ;
MAKITA, Y ;
IGARASHI, O .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) :1043-1048
[10]   SELECTIVE GROWTH OF HETEROEPITAXIAL GAP ON SI SUBSTRATES [J].
IGARASHI, O .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) :1430-&
12