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- [1] TEMPERATURE-DEPENDENCE OF THE DISTRIBUTION COEFFICIENT OF SCANDIUM IN SILICONINORGANIC MATERIALS, 1982, 18 (03) : 435 - 436VLASOV, VILOZOVSKII, VNKOLESNICHENKO, AI
- [2] TEMPERATURE-DEPENDENCE OF SPUTTERING COEFFICIENT OF SILICONFIZIKA TVERDOGO TELA, 1978, 20 (04): : 1235 - 1237LABUNOV, VABORISENKO, VE
- [3] TEMPERATURE-DEPENDENCE OF RADIATIVE RECOMBINATION COEFFICIENT IN SILICONPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 21 (01): : 357 - 367SCHLANGENOTTO, HMAEDER, HGERLACH, W
- [4] INFLUENCE OF TEMPERATURE-DEPENDENCE OF SILICON THERMAL-CONDUCTIVITY COEFFICIENT ON STATIONARY DISTRIBUTION OF TEMPERATURE IN SILICON TRANSISTORSRADIOTEKHNIKA I ELEKTRONIKA, 1974, 19 (01): : 214 - 216PETROV, BKKOCHETKO.AI
- [5] TEMPERATURE-DEPENDENCE OF SPUTTERING YIELD OF SILICON AND GERMANIUM TARGETSREVUE DE PHYSIQUE APPLIQUEE, 1975, 10 (04): : 183 - 186NIZAM, JBENAZETHCOLOMBIE, N
- [6] DEPENDENCE OF THE EFFECTIVE COEFFICIENT OF GERMANIUM DISTRIBUTION IN SILICON ON THE GERMANIUM CONCENTRATION IN THE MELTINORGANIC MATERIALS, 1990, 26 (05) : 761 - 763TUROVSKII, BMGORBACHEVA, NI
- [7] DIFFUSION-COEFFICIENT OF OXYGEN IN SILICON, TEMPERATURE-DEPENDENCEIEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (04): : 196 - 197不详
- [8] TEMPERATURE-DEPENDENCE OF THE AUGER RECOMBINATION COEFFICIENT OF UNDOPED SILICONJOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5111 - 5120SVANTESSON, KGNILSSON, NG
- [9] TEMPERATURE-DEPENDENCE OF THE REFLECTANCE OF SOLID AND LIQUID SILICONJOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 4975 - 4976LAMPERT, MOKOEBEL, JMSIFFERT, P
- [10] TEMPERATURE-DEPENDENCE OF THE EFFICIENCY OF FORMATION OF RADIATION DEFECTS IN SILICON AND GERMANIUMSOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (08): : 931 - 933KRAICHINSKII, ANOSTASHKO, NIROGUTSKII, IS