LUMINESCENCE AND SEMICONDUCTING PROPERTIES OF PLASMA CVD DIAMOND

被引：3
作者：
KAWARADA, H
YOKOTA, Y
MORI, Y
TOMIYAMA, A
MA, JS
WEI, J
SUZUKI, J
HIRAKI, A
机构：
[1] Faculty of Engineering, Osaka University, Suita, Osaka
来源：
VACUUM | 1990年 / 41卷 / 4-6期
关键词：
D O I：
10.1016/0042-207X(90)93812-W
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Chemical vapor deposition (CVD) of diamond has the advantage of enlarging the applications of semiconducting diamond. The rectifying properties of Schottky diodes of polycrystalline CVD diamonds are equivalent to those of bulk diamonds. The breakdown voltage is more than 100V in polycrystalline phase. The dominant cathodoluminescence center in CVD diamond is in the blue region of 2.6-3.0 eV and has the same properties as those observe in the Band A luminescence of natural type IIa (insulating) or type IIb (semiconducting) diamond. The electroluminescence has been also observed in boron-doped CVD diamonds. Using selective nucleation and growth, a new type of crystal growth suitable for CVD diamond, where hetero-epitaxial growth has been hardly achieved, has been developed as an advanced material fabrication based on CVD. © 1990.
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页码：885 / 888
页数：4
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