PRESSURE-DEPENDENCE OF TRANSVERSE OPTICAL PHONONS IN SEMICONDUCTING COMPOUNDS

被引:0
|
作者
MAJEWSKI, JA
机构
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:193 / 195
页数:3
相关论文
共 50 条
  • [1] PRESSURE-DEPENDENCE OF THE OPTICAL PHONONS AND TRANSVERSE EFFECTIVE CHARGE IN 3C-SIC
    OLEGO, D
    CARDONA, M
    VOGL, P
    PHYSICAL REVIEW B, 1982, 25 (06): : 3878 - 3888
  • [2] PRESSURE-DEPENDENCE OF THE OPTICAL PHONON FREQUENCIES AND THE TRANSVERSE EFFECTIVE CHARGE IN ALSB
    VES, S
    STROSSNER, K
    CARDONA, M
    SOLID STATE COMMUNICATIONS, 1986, 57 (07) : 483 - 486
  • [3] PRESSURE-DEPENDENCE OF ZONE EDGE TA PHONONS IN SILICON
    RICHTER, W
    RENUCCI, JB
    CARDONA, M
    SOLID STATE COMMUNICATIONS, 1975, 16 (01) : 131 - 134
  • [4] PRESSURE-DEPENDENCE OF THE TRANSVERSE OPTICAL-MODE GRUNEISEN-PARAMETER OF CRYSTALS
    TRIBE, L
    FRACCHIA, RM
    BRUNO, JAO
    BATANA, A
    COMPUTERS & CHEMISTRY, 1995, 19 (04): : 403 - 408
  • [5] PRESSURE-DEPENDENCE OF RAMAN PHONONS OF METALLIC BETA-SN
    OLIJNYK, H
    PHYSICAL REVIEW B, 1992, 46 (10): : 6589 - 6591
  • [6] PRESSURE-DEPENDENCE OF THE LINEWIDTH OF THE SOFT PHONONS IN PBTIO3
    SANJURJO, JA
    LOPEZCRUZ, E
    BURNS, G
    SOLID STATE COMMUNICATIONS, 1983, 48 (03) : 221 - 224
  • [7] Inverted optical phonons in II-VI semiconducting compounds
    Vinogradov, Evgeny
    Mavrin, Boris
    Novikova, Nadezhda
    Yakovlev, Vladimir
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (06): : 1480 - 1484
  • [8] PRESSURE-DEPENDENCE OF RAMAN PHONONS OF GE AND 3C-SIC
    OLEGO, D
    CARDONA, M
    PHYSICAL REVIEW B, 1982, 25 (02): : 1151 - 1160
  • [9] ON THE CALCULATION OF THE PRESSURE-DEPENDENCE OF THE TRANSVERSE OPTICAL-MODE FREQUENCY OF CUBIC IONIC-CRYSTALS
    BATANA, A
    FAOUR, J
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 130 (01): : 115 - 120
  • [10] Pressure dependence of optical phonons in ZnCdSe alloys
    Camacho, J
    Loa, I
    Cantarero, A
    Syassen, K
    Hernández-Calderón, I
    González, L
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 235 (02): : 432 - 436