CONCENTRATION-DEPENDENT BAND OFFSET IN INXGA1-XAS/GAAS STRAINED QUANTUM WELLS

被引：83

作者：

JOYCE, MJ ^{[1
]}

JOHNSON, MJ ^{[1
]}

GAL, M ^{[1
]}

USHER, BF ^{[1
]}

机构：

[1] UNIV NEW S WALES,SCH PHYS,KENSINGTON,NSW 2033,AUSTRALIA

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.38.10978

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10978 / 10980

页数：3

共 15 条

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[2]

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[4] OBSERVATION OF COMPRESSIVE AND TENSILE STRAINS IN INGAAS GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY [J].

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[6]

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[8] OPTICAL INVESTIGATION OF A NEW TYPE OF VALENCE-BAND CONFIGURATION IN INXGA1-XAS-GAAS STRAINED SUPERLATTICES [J].

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PHYSICAL REVIEW B, 1985, 31 (12) :8298-8301

[9] LARGE VALENCE-BAND OFFSET IN STRAINED-LAYER INXGA1-XAS-GAAS QUANTUM-WELLS [J].

MENENDEZ, J ;

PINCZUK, A ;

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PHYSICAL REVIEW B, 1987, 36 (15) :8165-8168

[10] ELECTROLYTE ELECTROREFLECTANCE STUDY OF THE BAND OFFSET IN A GAAS GA0.69AL0.31AS SUPERLATTICE [J].

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