A DEFECT MODEL FOR ION-INDUCED CRYSTALLIZATION AND AMORPHIZATION

被引:145
作者
JACKSON, KA
机构
[1] AT&T Bell Lab, United States
关键词
D O I
10.1557/JMR.1988.1218
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
17
引用
收藏
页码:1218 / 1226
页数:9
相关论文
共 16 条
[1]  
Brown W. L., 1987, Microscopy of Semiconducting Materials, 1987. Proceedings of the Institute of Physics Conference, P61
[2]  
BROWN WL, 1987, COMMUNICATION
[3]  
Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443
[4]   ION-BEAM-INDUCED CRYSTALLIZATION AND AMORPHIZATION OF SILICON [J].
ELLIMAN, RG ;
WILLIAMS, JS ;
BROWN, WL ;
LEIBERICH, A ;
MAHER, DM ;
KNOELL, RV .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :435-442
[5]   ION-BEAM INDUCED EPITAXY OF SILICON [J].
GOLECKI, I ;
CHAPMAN, GE ;
LAU, SS ;
TSAUR, BY ;
MAYER, JW .
PHYSICS LETTERS A, 1979, 71 (2-3) :267-269
[6]   RADIATION ENHANCED ANNEALING OF RADIATION-DAMAGE IN GE [J].
HOLMEN, G ;
PETERSTROM, S ;
BUREN, A .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (01) :45-50
[7]   RADIATION-DAMAGE IN GE PRODUCED BY NOBLE-GAS IONS INVESTIGATED BY SECONDARY-ELECTRON EMISSION METHOD [J].
HOLMEN, G ;
HOGBERG, P ;
BUREN, A .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (01) :39-44
[8]   ION-BEAM INDUCED CRYSTALLIZATION AND AMORPHIZATION AT A CRYSTALLINE AMORPHOUS INTERFACE IN [100] SILICON [J].
LEIBERICH, A ;
MAHER, DM ;
KNOELL, RV ;
BROWN, WL .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :457-461
[9]   ION-BEAM-INDUCED EPITAXIAL REGROWTH OF AMORPHOUS LAYERS IN SILICON ON SAPPHIRE [J].
LINNROS, J ;
SVENSSON, B ;
HOLMEN, G .
PHYSICAL REVIEW B, 1984, 30 (07) :3629-3638
[10]   PROPORTIONALITY BETWEEN ION-BEAM-INDUCED EPITAXIAL REGROWTH IN SILICON AND NUCLEAR-ENERGY DEPOSITION [J].
LINNROS, J ;
HOLMEN, G ;
SVENSSON, B .
PHYSICAL REVIEW B, 1985, 32 (05) :2770-2777