A METHOD FOR CALCULATING DIPOLAR HYPERFINE INTERACTIONS FOR SHALLOW IMPURITIES WITH APPLICATIONS TO DONORS IN SILICON

被引：0
作者：
HALE, EB
MIEHER, RL
机构：
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1968年 / 13卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：708 / &
相关论文
共 21 条
  • [1] Hyperfine Stark effect of shallow donors in silicon
    Pica, Giuseppe
    Wolfowicz, Gary
    Urdampilleta, Matias
    Thewalt, Mike L. W.
    Riemann, Helge
    Abrosimov, Nikolai V.
    Becker, Peter
    Pohl, Hans-Joachim
    Morton, John J. L.
    Bhatt, R. N.
    Lyon, S. A.
    Lovett, Brendon W.
    PHYSICAL REVIEW B, 2014, 90 (19):
  • [2] Halogen impurities in silicon: shallow single donors
    Appl Phys Lett, 6 (806):
  • [3] Halogen impurities in silicon: Shallow single donors
    Chadi, DJ
    APPLIED PHYSICS LETTERS, 1997, 71 (06) : 806 - 808
  • [4] THEORY OF SILICON HYPERFINE INTERACTIONS WITH SHALLOW-DONOR ELECTRONS - REPLY
    MIEHER, RL
    PHYSICAL REVIEW B, 1978, 17 (04): : 2069 - 2072
  • [5] Robust Two-Qubit Gates for Donors in Silicon Controlled by Hyperfine Interactions
    Kalra, Rachpon
    Laucht, Arne
    Hill, Charles D.
    Morello, Andrea
    PHYSICAL REVIEW X, 2014, 4 (02):
  • [6] SHALLOW DONOR ELECTRONS IN SILICON .I. HYPERFINE INTERACTIONS FROM ENDOR MEASUREMENTS
    HALE, EB
    MIEHER, RL
    PHYSICAL REVIEW, 1969, 184 (03): : 739 - &
  • [7] First-principles calculations of hyperfine interaction, binding energy, and quadrupole coupling for shallow donors in silicon
    Michael W. Swift
    Hartwin Peelaers
    Sai Mu
    John J. L. Morton
    Chris G. Van de Walle
    npj Computational Materials, 6
  • [8] First-principles calculations of hyperfine interaction, binding energy, and quadrupole coupling for shallow donors in silicon
    Swift, Michael W.
    Peelaers, Hartwin
    Mu, Sai
    Morton, John J. L.
    Van de Walle, Chris G.
    NPJ COMPUTATIONAL MATERIALS, 2020, 6 (01)
  • [9] Ab initio calculation of hyperfine and superhyperfine interactions for shallow donors in semiconductors -: art. no. 087602
    Overhof, H
    Gerstmann, U
    PHYSICAL REVIEW LETTERS, 2004, 92 (08)
  • [10] Generation of shallow nitrogen-oxygen donors as a method for studying nitrogen diffusion in silicon
    V. V. Voronkov
    A. V. Batunina
    G. I. Voronkova
    M. G. Mil’vidskii
    Physics of the Solid State, 2004, 46 : 1206 - 1212
123