PHOTOLUMINESCENCE OF INGAP/GAAS (111) LPE LAYERS WITH ELASTIC STRAIN DUE TO LATTICE MISMATCH

被引：3
作者：
KATO, T
MATSUMOTO, T
ISHIDA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 06期
关键词：
D O I：
10.1143/JJAP.26.893
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：893 / 896
页数：4
相关论文
共 15 条
[1]  
ARSENTEV IN, 1980, SOV PHYS SEMICOND+, V14, P1389
[2]   ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].
ASAI, H ;
OE, K .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056
[3]  
BERT NA, 1982, SOV PHYS SEMICOND+, V16, P35
[4]   THE ROLE OF LATTICE STRAIN IN THE PHASE-EQUILIBRIA OF III-V TERNARY AND QUATERNARY SEMICONDUCTORS [J].
BHATTACHARYA, PK ;
SRINIVASA, S .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5090-5095
[5]  
BIRMAN JL, 1982, HDB SEMICONDUCTORS, V1, P96
[6]   MODULATED PIEZOREFLECTANCE IN SEMICONDUCTORS [J].
GAVINI, A ;
CARDONA, M .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :672-+
[7]   DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].
HORNSTRA, J ;
BARTELS, WJ .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517
[8]   INFLUENCE OF LATTICE MISMATCH ON PHOTOLUMINESCENCE FROM LIQUID-PHASE EPITAXIAL GROWN INGAP ON GAAS SUBSTRATES [J].
KATO, T ;
MATSUMOTO, T ;
ISHIDA, T .
JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) :728-734
[9]   INFLUENCE OF PHOSPHORUS EVAPORATION FROM MELT ON INGAP GAAS LPE GROWTH [J].
KATO, T ;
MATSUMOTO, T ;
YOSHIOKA, Y ;
KOBAYASHI, M ;
ISHIDA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09) :L723-L725
[10]   EFFECT OF MISMATCH STRAIN ON BAND-GAP IN III-V SEMICONDUCTORS [J].
KUO, CP ;
VONG, SK ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5428-5432
12