EFFECTIVE ELECTRIC-FIELD IN THE N-TYPE HEAVILY DOPED EMITTER REGION OF SILICON P-N-JUNCTION SOLAR-CELLS

被引：1

|

作者：

VANCONG, H

BRUNET, S

CHARAR, S

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 68卷 / 01期

关键词：

D O I：

10.1002/pssa.2210680153

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：K49 / K53

页数：5

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