GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION

被引：75

作者：

DUMKE, WP

WOODALL, JM

RIDEOUT, VL

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 12期

关键词：

D O I：

10.1016/0038-1101(72)90127-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1339 / +

页数：1

共 12 条

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[10] PREPARATION AND PROPERTIES OF BORON ARSENIDES AND BORON ARSENIDE-GALLIUM ARSENIDE MIXED CRYSTALS [J].

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