THE GROWTH OF HIGHLY RESISTIVE GALLIUM NITRIDE FILMS

被引：32

作者：

LAKSHMI, E

MATHUR, B

BHATTACHARYA, AB

BHARGAVA, VP

机构：

[1] INDIAN INST TECHNOL,DEPT ELECT ENGN,NEW DELHI 110029,INDIA

[2] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA

来源：

THIN SOLID FILMS | 1980年 / 74卷 / 01期

关键词：

D O I：

10.1016/0040-6090(80)90441-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：77 / 82

页数：6

共 7 条

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[6] LUMINESCENT PROPERTIES OF GAN [J].

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WITTKE, J .

SOLID STATE COMMUNICATIONS, 1970, 8 (13) :1051-+

[7] SYNTHESIS OF 3-5 SEMICONDUCTOR NITRIDES BY REACTIVE CATHODIC SPUTTERING [J].

PUYCHEVRIER, N ;

MENORET, M .

THIN SOLID FILMS, 1976, 36 (01) :141-145

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