TIME-DEPENDENT BREAKDOWN OF OXYNITRIDE GATE DIELECTRICS UNDER UNIPOLAR AC STRESS

被引：0
|
作者：
JOSHI, AB [1 ]
KWONG, DL [1 ]
LEE, S [1 ]
机构：
[1] NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 04期
关键词：
D O I：
10.1063/1.351686
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Time-dependent dielectric breakdown under unipolar ac stress is investigated for control, nitrided, and reoxidized nitrided oxides, prepared by rapid thermal processing. All these gate dielectrics show longer time-to-breakdown under ac stress compared to constant voltage stress. Nevertheless, the extent of retardation of breakdown under ac stress is observed to be minimum for nitrided oxides and maximum for reoxidized nitrided oxides. Differences in detrapping behavior in these gate dielectrics are used to explain different improvement factors for breakdown under ac stress.
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页码：1654 / 1656
页数：3
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