RAPID THERMAL ANNEALING AND REGROWTH OF THERMAL DONORS IN SILICON

被引：51

作者：

STEIN, HJ

SHATAS, SC

机构：

[1] SILTEC CORP,MT VIEW,CA 94043

[2] PEAK SYST,FREMONT,CA 94538

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.336820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3495 / 3502

页数：8

共 18 条

[1] THE OXYGEN RELATED DONOR EFFECT IN SILICON [J].

BENTON, JL ;

KIMERLING, LC ;

STAVOLA, M .

PHYSICA B & C, 1983, 116 (1-3) :271-275

[2]

CRAVEN RA, 1981, ELECTROCHEMICAL SOC, V81, P254

[3] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J].

GOSELE, U ;

TAN, TY .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02) :79-92

[4]

HAHN SK, 1984, ELECTROCHEMICAL SOC, V84, P85

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[6]

KAISER W, 1957, J APPL PHYS, V28, P822

[7]

KIMERLING LC, 1985, 13TH P INT C DEF SEM, P129

[8] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J].

KOKOROWSKI, SA ;

OLSON, GL ;

HESS, LD .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :921-926

[9] DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J].

MIKKELSEN, JC .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :336-337

[10]

Oehrlein G. S., 1985, Thirteenth International Conference on Defects in Semiconductors, P701

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